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SFH619A-X009T Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH619A-X009T Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page SFH619A www.vishay.com Vishay Semiconductors Rev. 1.8, 13-Jan-12 2 Document Number: 83674 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. COUPLER Derate linearly from 25 °C 3.33 mW/°C Total power dissipation Ptot 250 mW Isolation test voltage between emitter and detector t = 1 s VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering temperature (1) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.2 1.5 V Reverse current VR = 6 V IR 0.02 10 μA Capacitance VR = 0 V CO 14 pF OUTPUT Collector emitter breakdown voltage ICE = 100 μA BVCEO 300 V Emitter collector breakdown voltage IEC = 100 μA BVECO 0.3 V Collector emitter dark current VCE = 200 V,TA = 25 °C ICEO 10 200 nA VCE = 200 V,TA = 100 °C ICEO 20 nA Collector emitter capacitance VCE = 0 V, f = 1 MHz CCE 39 pF COUPLER Collector emitter saturation voltage IF = 1 mA, IC = 10 mA VCEsat 1V IF = 10 mA, IC = 100 mA VCEsat 0.3 1.2 V Coupling capacitance VI-O = 0 V, f = 1 MHz CC 0.6 pF CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Coupling transfer ratio IF = 1 mA, VCE = 1 V CTR 1000 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Rise time VCC = 10 V, IC = 10 mA, RL = 100 Ω tr 3.5 μs VCC = 10 V, IF = 16 mA, RL = 180 Ω tr 1μs Fall time VCC = 10 V, IC = 10 mA, RL = 100 Ω tf 14.5 μs VCC = 10 V, IF = 16 mA, RL = 180 Ω tf 20.5 μs Turn-on time VCC = 10 V, IC = 10 mA, RL = 100 Ω ton 4.5 μs VCC = 10 V, IF = 16 mA, RL = 180 Ω ton 1.5 μs Turn-off time VCC = 10 V, IC = 10 mA, RL = 100 Ω toff 29 μs VCC = 10 V, IF = 16 mA, RL = 180 Ω toff 53.5 μs ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT |
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