K815P, K825P, K845P

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Vishay Semiconductors

Rev. 2.1, 24-Sep-12

2

Document Number: 83524

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

OUTPUT

Collector emitter voltage

35

V

Emitter collector voltage

7V

Collector current

80

mA

Collector peak current

≤ 10 ms

100

mA

Power dissipation

150

mW

Junction temperature

125

°C

COUPLER

AC isolation test voltage (RMS)

t = 1 min, f = 50 Hz

5kV

Total power dissipation

250

mW

Operating ambient temperature

- 40 to + 100

°C

Storage temperature range

- 55 to + 125

°C

260

°C

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.2

1.4

V

Reverse current

10

μA

OUTPUT

Collector emitter voltage

35

V

Emitter collector voltage

7V

Collector dark current

100

nA

COUPLER

Collector emitter saturation voltage

0.1

V

Cut-off frequency

Ω

10

kHz

Coupling capacitance

f = 1 MHz

0.3

pF

CURRENT TRANSFER RATIO

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

CTR

600

800

%

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Rise time

Ω

(see figure 1)

300

μs

Turn-off time

Ω

(see figure 1)

250

μs

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT