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CNY17F-3X009T Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. CNY17F-3X009T
Description  Optocoupler, Phototransistor Output, no Base Connection
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

CNY17F-3X009T Datasheet(HTML) 2 Page - Vishay Siliconix

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CNY17F
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 08-Jan-14
2
Document Number: 83607
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through
hole parts (DIP).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Surge forward current
t
≤ 10 μs
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Output power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter and
detector
t = 1 min
VISO
5000
VRMS
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +110
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
Total power dissipation
Pdiss
250
mW
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.39
1.65
V
Breakdown voltage
IR = 10 μA
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Base collector capacitance
VCE = 5 V, f = 1 MHz
CBC
6.5
pF
Emitter base capacitance
VCE = 5 V, f = 1 MHz
CEB
7.5
pF
0
50
100
150
200
250
300
0
20
40
60
80
100
120
T
amb - Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode


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