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Vishay Semiconductors

Rev. 2.2, 08-Jan-14

2

Document Number: 83607

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

hole parts (DIP).

Fig. 1 - Total Power Dissipation vs. Ambient Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

DC forward current

60

mA

Surge forward current

t

≤ 10 μs

2.5

A

Power dissipation

100

mW

OUTPUT

Collector emitter breakdown voltage

70

V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Output power dissipation

150

mW

COUPLER

Isolation test voltage between emitter and

detector

t = 1 min

5000

Storage temperature range

-55 to +150

°C

Ambient temperature range

-55 to +110

°C

Junction temperature

100

°C

2 mm from case,

≤ 10 s

260

°C

Total power dissipation

250

mW

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.39

1.65

V

Breakdown voltage

6V

Reverse current

0.01

10

μA

Capacitance

25

pF

OUTPUT

Collector emitter capacitance

5.2

pF

Base collector capacitance

6.5

pF

Emitter base capacitance

7.5

pF

0

50

100

150

200

250

300

0

20

40

60

80

100

120

T

Coupled device

Phototransistor

IR-diode