CNY65Exi

www.vishay.com

Vishay Semiconductors

Rev. 2.5, 10-Feb-15

2

Document Number: 83541

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Notes

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

5V

Forward current

75

mA

Forward surge current

≤ 10 μs

1.5

A

Power dissipation

120

mW

Junction temperature

100

°C

OUTPUT

Collector emitter voltage

32

V

Emitter collector voltage

7V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Power dissipation

130

mW

Junction temperature

100

°C

COUPLER

DC isolation test voltage

t = 1 min

11.6

kV

Total power dissipation

250

mW

Ambient temperature range

-55 to +85

°C

Storage temperature range

-55 to +100

°C

Soldering temperature

2 mm from case, t

≤ 10 s

260

°C

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.25

1.6

V

OUTPUT

Collector emitter voltage

32

V

Emitter collector voltage

7V

Collector dark current

200

nA

COUPLER

DC isolation test voltage

t = 1 min

11.6

kV

Isolation resistance

40 % relative humidity

Ω

Collector saturation voltage

0.3

V

Cut-off frequency

Ω

110

kHz

Coupling capacitance

f = 1 MHz

0.3

pF

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

CNY65Exi

CTR

50

100

300

%

CNY65BExi

CTR

100

200

%