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TL081 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. TL081
Description  WIDE BANDWIDTH JFET INPUT OPERATIONAL AMPLIFIER
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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TL081 Datasheet(HTML) 2 Page - National Semiconductor (TI)

   
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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage
g
18V
Power Dissipation (Notes 1 and 6)
670 mW
Operating Temperature Range
0 Cto a70 C
Tj(MAX)
115 C
Differential Input Voltage
g
30V
Input Voltage Range (Note 2)
g
15V
Output Short Circuit Duration
Continuous
Storage Temperature Range
b
65 Cto a150 C
Lead Temp (Soldering 10 seconds)
260 C
ijA
120 CW
ESD rating to be determined
DC Electrical Characteristics (Note 3)
Symbol
Parameter
Conditions
TL081C
Units
Min
Typ
Max
VOS
Input Offset Voltage
RS e 10 kX TA e 25 C
5
15
mV
Over Temperature
20
mV
D
VOS DT
Average TC of Input Offset
RS e 10 kX
10
m
V C
Voltage
IOS
Input Offset Current
Tj e 25 C (Notes 3 4)
25
100
pA
Tj s 70 C4
nA
IB
Input Bias Current
Tj e 25 C (Notes 3 4)
50
200
pA
Tj s 70 C8
nA
RIN
Input Resistance
Tj e 25 C1012
X
AVOL
Large Signal Voltage Gain
VS e g15V TA e 25 C
25
100
VmV
VO e g10V RL e 2kX
Over Temperature
15
VmV
VO
Output Voltage Swing
VS e g15V RL e 10 kX
g
12
g
135
V
VCM
Input Common-Mode Voltage
VS e g15V
g
11
a
15
V
Range
b
12
V
CMRR
Common-Mode Rejection Ratio
RS s 10 kX
70
100
dB
PSRR
Supply Voltage Rejection Ratio
(Note 5)
70
100
dB
IS
Supply Current
18
28
mA
AC Electrical Characteristics (Note 3)
Symbol
Parameter
Conditions
TL081C
Units
Min
Typ
Max
SR
Slew Rate
VS e g15V TA e 25 C13
V ms
GBW
Gain Bandwidth Product
VS e g15V TA e 25 C
4
MHz
en
Equivalent Input Noise Voltage
TA e 25 C RS e 100X
25
nV
0Hz
f e 1000 Hz
in
Equivalent Input Noise Current
Tj e 25 C f e 1000 Hz
001
pA
0Hz
Note 1
For operating at elevated temperature the device must be derated based on a thermal resistance of 120 CW junction to ambient for N package
Note 2
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage
Note 3
These specifications apply for VS e g15V and 0 C sTA s a70 C VOS IB and IOS are measured at VCM e 0
Note 4
The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature Tj Due to the limited
production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation PD Tj e TA a ijA PD where ijA is the thermal resistance from junction to ambient Use of a heat sink is
recommended if input bias current is to be kept to a minimum
Note 5
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
VS e g5V to g15V
Note 6
Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate
outside guaranteed limits
2


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