2SC3930 datasheet(1/3 Pages) JIANGSU

Part #	2SC3930

Description	SOT-323 Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

2SC3930

TRANSISTOR (NPN)

FEATURES

For high-frequency Amplification Complementary to 2SA1532

Optimum for RF amplification of FM/AM radios

High transition frequency fT

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

30

mA

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 100μA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=10V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=10V,IC=1mA

70

220

Transition frequency

fT

VCE=10V,IE=1mA,

f=200MHZ

150

MHz

Common emitter reverse transfer

capacitance

Cre

VCB=10V,IC=1mA,

f=10.7MHZ

1.5

pF

Noise figure

NF

VCB=10V,IC=1mA, f=5MHz

4

dB

Reverse transfer impedance

Zrb

VCB=10V,IC=1mA, f=2MHz

50

Ω

CLASSIFICATION OF hFE(1)

Marking

VB

VC

Range

70-140

110-220

SOT-323

1.BASE

2.EMITTER

3.COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

B,Sep,2014

JC T

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