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2SC3437 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # 2SC3437
Description  SOT-23 Plastic-Encapsulate Transistors
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SC3437 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC3437
TRANSISTOR (NPN)
FEATURES
 High Transition Frequency
 Low Saturation Voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
200
mA
PC
Collector Power Dissipation
150
mW
RΘJA
Thermal Resistance From Junction To Ambient
833
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC=10mA
40
240
DC current gain
hFE(2)
VCE=1V, IC=100mA
20
Collector-emitter saturation voltage
VCE(sat)
IC=20mA, IB=1mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA, IB=1mA
1
V
Transition frequency
fT
VCE=10V,IC=10mA
200
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
6
pF
CLASSIFICATION OF hFE(1)
RANK
R
O
Y
RANGE
40–80
70–140
120–240
MARKING
CHR
CHO
CHY
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
B,Oct,2014
JC T


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