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2SC3303 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # 2SC3303
Description  TO-251-3L Plastic-Encapsulate Transistors
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SC3303 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SC3303
TRANSISTOR (NPN)
FEATURES
Low Collector Saturation Voltage
High Speed Switching Time
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA,IE=0
100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA,IC=0
7
V
Collector cut-off current
ICBO
VCB=100V,IE=0
1
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
1
μA
hFE(1)
VCE=1V, IC=1A
70
240
DC current gain
hFE(2)
VCE=1V, IC=3A
40
Collector-emitter saturation voltage
VCE(sat)
IC=3A,IB=150mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=3A,IB=150mA
1.2
V
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
80
pF
Transition frequency
fT
VCE=4V,IC=1A,
20
MHz
CLASSIFICATION OF hFE(1)
RANK
O
Y
RANGE
70-140
120-240
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
PC
Collector Power Dissipation
1
W
RθJA
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
www.cj-elec.com
1
D,Nov,2014


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