2SC1674 datasheet(1/3 Pages) JIANGSU

Part #	2SC1674

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC1674

TRANSISTOR (NPN)

FEATURES

General Purpose Switching and Amplification.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

4

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=3V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V, IC=1mA

40

180

Collector-emitter saturation voltage

VCE(sat)

IC=10mA,IB=1mA

0.3

V

Base-emitter voltage

VBE

VCE=6V, IC=1mA

0.65

0.77

V

Collector output capacitance

Cob

VCB=6V,IE=0, f=1MHz

1.3

pF

Transition frequency

fT

VCE=6V,IC=1mA

400

MHz

CLASSIFICATION OF hFE

RANK

Y

GR

BL

RANGE

40-80

60-120

90-180

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current

0.02

A

PC

Collector Power Dissipation

250

mW

RθJA

Thermal Resistance From Junction To Ambient

500

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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