2SB1370 datasheet(1/2 Pages) JIANGSU

Part #	2SB1370

Description	TO-220F Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

2SB1370 TRANSISTOR (PNP)

FEATURES

Breakdown Voltage High

Reverse Cut-off Current Small

Saturation Voltage Low

Collector Power dissipation

PCM : 2 W (Tamb=25.)

30 W (Tcase=25.)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-3

A

TJ

Junction temperature

150

℃

Tstg

Storage temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

T

yp

M

ax

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC=-50μA, IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-60V, IE=0

-10

μA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-10

μA

DC current gain

hFE *

VCE=-5V, IC=-500mA

100

320

Collector-emitter saturation voltage

VCE(sat) *

IC=-2A, IB=-0.2A

-1.5

V

Base-emitter saturation voltage

VBE(sat) *

IC=-2A, IB=-0.2A

-1.5

V

Transition frequency

fT

VCE=-5V, IC=-500mA,f=5MHz

15

MHz

Out capacitance

Cob

VCB= -10 V ,f=1MHZ

80

pF

*Pulse test: tp≤300μS, δ≤0.02.

CLASSIFICATION OF hFE

Rank

E

F

Range

100-200

160-320

TO-220F

1. BASE

2. COLLECTOR

3. EMITTE

www.cj-elec.com

1

C,May,2016

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