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SUP85N06 Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SUP85N06
Description  N-Channel 60-V (D-S) 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUP85N06 Datasheet(HTML) 4 Page - Vishay Siliconix

   
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SUP/SUB85N06-05
Vishay Siliconix
New Product
www.vishay.com
2-4
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.5
1.0
1.5
2.0
–50
–25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TJ – Junction Temperature (_C)
VSD – Source-to-Drain Voltage (V)
100
10
1
0.3
0.6
0.9
1.2
VGS = 10 V
ID = 85 A
TJ = 25_C
TJ = 150_C
0
40
50
60
70
80
–50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (_C)
tin (Sec)
1000
10
0.0001
0.001
0.1
1
0.1
0.01
IAV (A) @ TA = 150_C
ID = 250 mA
100
1
IAV (A) @ TA = 25_C


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