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SUP85N06 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUP85N06 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page SUP/SUB85N06-05 Vishay Siliconix New Product Document Number: 71113 S-20556—Rev. C, 22-Apr-02 www.vishay.com 2-1 N-Channel 60-V (D-S) 175 _C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V " 60 0.0072 @ VGS = 4.5 V "85 a D G S N-Channel MOSFET TO-220AB Top View GD S DRAIN connected to TAB TO-263 S D G Top View SUP85N06-05 SUB85N06-05 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 V _ TC = 25_C "85a Continuous Drain Current (TJ = 175_C) TC = 125_C ID "85a Pulsed Drain Current IDM "240 A Avalanche Current IAR "75 Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ TC = 25_C (TO-220AB and TO-263) 250c Maximum Power Dissipationb TA = 25_C (TO-263)d PD 3.7 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit PCB Mount (TO-263)d 40 Junction-to-Ambient Free Air (TO-220AB) RthJA 62.5 _C/W Junction-to-Case RthJC 0.6 C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). |
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