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STC4301D Datasheet(PDF) 1 Page - Stanson Technology |
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STC4301D Datasheet(HTML) 1 Page - Stanson Technology |
1 / 8 page STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4301D 2017. V1 DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION TO252-4L D1 / D2 PART MARKING Y ∶ Year A ∶ Date code B/C:Process Code X : Package Code FEATURE N-Channel l 40V/12.0A, RDS(ON) = 25mR @VGS = 10V l 40V/10.0A, RDS(ON) = 32mΩ @VGS = 4.5V P-Channel l -40V/-8.0A, RDS(ON) = 40mΩ @VGS = -10V l -40V/-4.0A, RDS(ON)= 65mΩ @VGS = - 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO252-4L package |
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