STC4301D

N&P Pair Enhancement Mode MOSFET

23.0A / -20.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2007, Stanson Corp.

STC4301D 2017. V1

DESCRIPTION

The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density

DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

and provide superior switching performance. This device is particularly suited for low voltage application

such as power management, where high-side switching, low in-line power loss and resistance to transient

are needed.

PIN CONFIGURATION

TO252-4L

D1 / D2

PART MARKING

Y

∶

Year

A

∶

Date code

B/C：Process Code

X

：

Package Code

FEATURE

N-Channel

l

l

P-Channel

l

l

l

Super high density cell design for

l

Exceptional on-resistance and maximum

DC current capability

l

TO252-4L package