MJD5731

http://onsemi.com

3

0.03

Figure 1. DC Current Gain

2.0

0.02 0.03

0.05

0.1

0.2

0.5

1.0

2.0

30

10

3.0

Figure 2. Collector-Emitter Saturation Voltage

0.02

0

0.05

0.3

1.2

5.0

1.0

2.0

1.4

1

20

0.5

0.3

0.8

0.6

0.1

0.2

0.2

0.4

25°C

−55 °C

100

50

200

150°C

−55 °C

1.0

0.8

1.4

1.2

0.4

0

0.6

0.2

Figure 3. Base-Emitter Voltage

0.05

0.2

2.0

0.1

0.5

0.3

1.0

0.02 0.03

25°C

150°C

0.02

1

0.8

1.4

1.2

0.4

0

0.6

0.2

Figure 4. “On” Voltages

0.06

0.2

2

0.1

0.6

0.04

0.4

1

10

5.0

Figure 5. Forward Bias Safe Operating Area

5.0

2.0

0.5

0.01

30

100

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

dc

500 ms

0.05

10

20

1.0ms

200 300

500

1.0

0.2

50

0.1

0.02

100 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse

Figure 6. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.