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SI1433DH Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI1433DH
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1433DH Datasheet(HTML) 2 Page - Vishay Siliconix

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Si1433DH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 100 mA
-1
-3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
-1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V, TJ = 85_C
-5
mA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
-4
A
Drain Source On State Resistancea
r
VGS = - 10 V, ID = - 2.2 A
0.120
0.150
W
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 1.6 A
0.210
0.260
W
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 2.2 A
4
S
Diode Forward Voltagea
VSD
IS = - 1.2 A, VGS = 0 V
- 0.85
- 1.2
V
Dynamicb
Total Gate Charge
Qg
3.1
5
Gate-Source Charge
Qgs
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A
1.0
nC
Gate-Drain Charge
Qgd
1.6
Turn-On Delay Time
td(on)
11
17
Rise Time
tr
VDD = - 15 V, RL = 15 W
17
26
ns
Turn-Off Delay Time
td(off)
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
18
27
ns
Fall Time
tf
13
20
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1
2
3
4
5
6
7
8
0
1234
5
0
1
2
3
4
5
6
7
8
0
1234
5
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
VGS = 10 thru 5 V
4 V
TC = - 55_C
125
_C
3 V
25
_C


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