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SI1433DH Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI1433DH
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1433DH Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switches
-
Notebook PCs
-
Servers
Si1433DH
Vishay Siliconix
New Product
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
- 30
0.150 @ VGS = - 10 V
- 2.2
- 30
0.260 @ VGS = - 4.5 V
- 1.6
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Marking Code
BE
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1433DH-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
- 2.2
- 1.9
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
- 1.7
- 1.4
A
Pulsed Drain Current
IDM
-8
A
Continuous Diode Current (Diode Conduction)a
IS
- 1.4
- 0.9
Maximum Power Dissipationa
TA = 25_C
PD
1.45
0.95
W
Maximum Power Dissipationa
TA = 85_C
PD
0.75
0.5
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi
ta
t
v 5 sec
R
65
85
Maximum Junction-to-Ambienta
Steady State
RthJA
105
130
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
38
48
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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