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R1LP0408CSP-5SI Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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R1LP0408CSP-5SI Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 14 page Rev.1.00, Aug.01.2003, page 1 of 13 R1LP0408C-I Series Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit) REJ03C0067-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II. Features • Single 5 V supply: 5 V ± 10% • Access time: 55/70 ns (max) • Power dissipation: Active: 10 mW/MHz (typ) Standby: 4 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output. Three state output • Directly TTL compatible. All inputs and outputs • Battery backup operation. • Operating temperature: −40 to +85°C |
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Similar Description - R1LP0408CSP-5SI |
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