4

OPA838

SBOS867 – AUGUST 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Staying below this ± supply turn-on edge rate prevents the edge-triggered ESD absorption device across the supply pins from turning

on.

(3)

Long-term continuous output current for electromigration limits.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

5.5

V

1

V/µs

Input voltage

V

Differential input voltage

±1

V

Continuous input current

±10

mA

±20

mA

Continuous power dissipation

See Thermal Information

Maximum junction temperature

150

°C

Operating free-air temperature

–40

125

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±1500

V

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Single-supply voltage

2.7

5

5.4

V

Ambient temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

OPA838

UNIT

DBV

(SOT-23)

DCK

(SC70)

DCKS

(SC70)

6 PINS

5 PINS

6 PINS

Junction-to-ambient thermal resistance

194

203

189

°C/W

Junction-to-case (top) thermal resistance

129

152

150

°C/W

Junction-to-board thermal resistance

39

76

79

°C/W

Junction-to-top characterization parameter

26

58

61

°C/W

Junction-to-board characterization parameter

39

76

79

°C/W