K9K1208U0A-YCB0, K9K1208U0A-YIB0

FLASH MEMORY

8

AC Characteristics for Operation

NOTE :

1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.

2. To break the sequential read cycle, CE must be held high for longer time than tCEH.

3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.

Parameter

Symbol

Min

Max

Unit

Data Transfer from Cell to Register

-

10

µs

ALE to RE Delay( ID read )

100

-

ns

ALE to RE Delay(Read cycle)

50

-

ns

CE to RE Delay( ID read)

100

-

ns

Ready to RE Low

20

-

ns

RE Pulse Width

30

-

ns

WE High to Busy

-

100

ns

Read Cycle Time

60

-

ns

RE Access Time

-

35

ns

RE High to Output Hi-Z

15

30

ns

CE High to Output Hi-Z

-

20

ns

RE High Hold Time

25

-

ns

Output Hi-Z to RE Low

0

-

ns

Last RE High to Busy(at sequential read)

-

100

ns

CE High to Ready(in case of interception by CE at read)

-

ns

100

-

ns

RE Low to Status Output

-

35

ns

CE Low to Status Output

-

45

ns

WE High to RE Low

60

-

ns

RE access time(Read ID)

-

35

ns

Device Resetting Time(Read/Program/Erase)

-

µs

AC Timing Characteristics for Command / Address / Data Input

Parameter

Symbol

Min

Max

Unit

CLE setup Time

0

-

ns

CLE Hold Time

10

-

ns

CE setup Time

0

-

ns

CE Hold Time

10

-

ns

WE Pulse Width

-

ns

ALE setup Time

0

-

ns

ALE Hold Time

10

-

ns

Data setup Time

20

-

ns

Data Hold Time

15

-

ns

Write Cycle Time

60

-

ns

WE High Hold Time

25

-

ns

NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.