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NTE160 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE160 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream- plifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES 20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, (IB = 0), VCEO 16V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage (IC = 0), VEBO 0.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TA = +45°C), Ptot 60mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +90 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –30 ° to +75°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 400 °C/W max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient, RthJA 750 °C/W max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCE = –20V, VBE = 0 – – –8 µA ICEO VCE = –15V, IB = 0 – – –500 µA Emitter Cutoff Current IEBO VEB = –0.3V, IC = 0 – – –100 µA Base–Emitter Voltage VBE IC = –2mA, VCE = –10V – –350 – mV IC = –5mA, VCE = –5V – –400 – mV DC Current Gain hFE IC = –2mA, VCE = –10V – 50 – IC = –5mA, VCE = –5V – 42 – Transition Frequency fT IC = –2mA, VCE = –10V, f = 100MHz – 700 – MHz Reverse Capacitance –Cre IC = –2mA, VCE = –10V, f = 450kHz – 0.23 – pF Noise Figure NF IC = –2mA, VCE = –10V, Rg = 60Ω, f = 800MHz – 5 6 dB Power Gain Gpb IC = –2mA, VCE = –10V, RL = 2kΩ, f = 800MHz 11 14 – dB |
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