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NTE159 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE159
Description  Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE159 Datasheet(HTML) 1 Page - NTE Electronics

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NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
1.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = 25°C), PD
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
5mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = 25°C), PD
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
12mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RθJC
83.3
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, RθJA
200
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com-
plementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0
80
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
80
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
V
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
50
nA
VCB = 50V, IE = 0, TA = +75°C
5
µA
Emitter Cutoff Current
IEBO
100
nA


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