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LM339-MIL

SNOSD54 – JUNE 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Refer to RETS139X for military specifications.

(3)

Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the common-mode

range, the comparator will provide a proper output state. The low input voltage state must not be less than

the magnitude of the negative power supply, if used) (at 25°C).

(4)

This input current will only exist when the voltage at any of the input leads is driven negative. It is because of the collector-base junction

of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is

also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the comparators to go

to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive

and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than

25°C).

(5)

For operating at high temperatures, the device must be derated based on a 125°C maximum junction temperature and a thermal

resistance of 95°C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The low bias

transistors are allowed to saturate.

(6)

Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground,

the maximum output current is approximately 20 mA independent of the magnitude of V+.

6 Specifications

6.1 Absolute Maximum Ratings

See

(1) (2)

MIN

MAX

UNIT

Supply voltage, V+

36

36

Input voltage

–0.3

36

(4)

50

mA

PDIP

1050

mW

Cavity DIP

1190

SOIC package

760

Continuous

−65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±600

V