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CM200DY-24NF Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM200DY-24NF Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Mar.2003 VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25 °C Tj = 125 °C VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6 Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 200 400 200 400 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE V V A A A A W °C °C V N • m N • m g 1 0.5 2.5 — 47 4 0.9 — 500 150 600 350 250 — 3.2 0.11 0.19 — 0.066*3 16 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω — — 1.8 2.0 — — — 1350 — — — — — 7.5 — — — 0.04 — — — — — — — — — — — — — — — — — — — — — 1.6 7V V 68 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC’ = 112 °C*3 Pulse (Note 2) Pulse (Note 2) TC = 25 °C Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. MAXIMUM RATINGS (Tj = 25 °C) ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Test conditions |
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