BYM36E datasheet(2/5 Pages) VISHAY

Part #	BYM36E

Description	Fast Avalanche Sinterglass Diode

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Document Number 86012

Rev. 1.6, 12-Aug-04

VISHAY

BYM36

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

l = 10 mm, TL = constant

RthJA

25

K/W

on PC Board with spacing

\re\n25 mm

RthJA

70

K/W

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 3 A

BYM36A-

BYM36C

VF

1.6

V

BYM36D-

BYM36E

VF

1.78

V

IF = 3 A, Tj = 175 °C

BYM36A-

BYM36C

VF

1.22

V

BYM36D-

BYM36E

VF

1.28

V

Reverse current

VR = VRRM

IR

5

µA

VR = VRRM, Tj = 150 °C

IR

100

µA

Reverse breakdown voltage

IR = 100 µA

BYM36A

V(BR)R

300

V

BYM36B

V(BR)R

500

V

BYM36C

V(BR)R

700

V

BYM36D

V(BR)R

900

V

BYM36E

V(BR)R

1100

V

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

BYM36A-

BYM36C

trr

100

ns

BYM36D-

BYM36E

trr

150

ns

Figure 1. Max. Reverse Power Dissipation vs. Junction

Temperature

0

40

80

120

160

0

100

200

300

400

600

Tj – Junction Temperature (°C)

200

95 9705

500 RthJA=25K/W

RthJA=70K/W

200V

400V

600V

800V

1000V

Figure 2. Max. Average Forward Current vs. Ambient Temperature

0

1

2

3

4

Tamb- Ambient Temperature ( °C)

95 9706

40

80

120

160

200

RthJA =25K/W

R thJA =70 K/W

VR =VRRM

Half Sinewave

BYM36A, BYM36B, BYM36C

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