2SA1955 datasheet(2/6 Pages) FOSHAN

Part #	2SA1955

Description	Silicon PNP transistor in a SOT-23 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SA1955

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-15

V

Collector to Emitter Voltage

VCEO

-12

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current

IC

-400

mA

Base Current

IB

-50

mA

Collector Power Dissipation

PC

100

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=-15V

IE=0

-0.1

μA

Emitter Base Cut-Off Current

IEBO

VEB=-5.0V

Ic=0

-0.1

μA

DC Current Gain

hFE

VCE=-2.0V

IC=-10mA

300

1000

VCE(sat)(1) IC=-10mA

IB=-0.5mA

-0.015

-0.03

V

Collector to Emitter Saturation

Voltage

VCE(sat)(2) IC=-200mA

IB=-10mA

-0.11

-0.25

V

Base to Emitter Saturation Voltage VBE(sat)

IC=-200mA

IB=-10mA

-0.87

-1.2

V

Transition Frequency

fT

VCE=-2.0V

IE=-10mA

80

130

MHz

Collector Output Capacitance

Cob

VCB=-10V

IE=0

f=1.0MHz

4.2

pF

Collector-Emitter On Resistance

Ron

IB=-1.0mA

Vin=-1.0V

Vrmsf=1KHZ

0.9

Ω

Turn-On Time

ton

40

Storage Time

Tstg

280

Switching time

Fall Time

tf

IB1=-IB2=5.0mA

45

ns

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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