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BF961 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. BF961
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF961 Datasheet(HTML) 3 Page - Vishay Siliconix

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VISHAY
BF961
Document Number 85002
Rev. 1.5, 25-Nov-04
Vishay Semiconductors
www.vishay.com
3
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
0
2
4
6
8
10
12
14
16
18
20
22
24
–2
–1
0123456
VG2S – Gate 2 Source Voltage(V)
96 12161
VDS =15V
IDS =10mA
VG1S = 0.5 V
0V
–0.5 V
0
2
4
6
8
10
12
14
16
18
20
22
-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5
VG1S - Gate 1 Source Voltage ( V )
96 12162
VDS =15V
f=1MHz
VG2S =5V
4V
3V
2V
1V
0V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VG1S – Gate 1 Source Voltage(V)
96 12163
VDS =15V
VG2S =4V
f=1MHz
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Figure 7. Output Capacitance vs. Drain Source Voltage
Figure 8. Short Circuit Input Admittance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
–2
–1
01
23
45
6
7
VG2S – Gate 2 Source Voltage(V)
96 12164
VDS =15V
VG1S =0
f=1MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
2468 10 12 14 16 18 20 22
VDS - Drain Source V oltage ( V )
96 12165
VG2S =4V
f=1MHz
0
2
4
6
8
10
12
14
16
18
012
34
56
78
9
10
Re (y11)( mS )
96 12166
VDS =15V
VG2S =4V
ID = 5...20 mA
f = 50...700 MHz
f =700 MHz
600 MHz
500 MHz
400 MHz
300 MHz
200 MHz
100 MHz


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