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BF961 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. BF961
Description  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF961 Datasheet(HTML) 1 Page - Vishay Siliconix

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BF961
Document Number 85002
Rev. 1.5, 25-Nov-04
Vishay Semiconductors
www.vishay.com
1
13625
1
4
3
2
G2
G1
D
S
Electrostatic sensitive device.
Observe precautions for handling.
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
• High cross modulation performance
• Low noise figure
• High AGC-range
• Low feedback capacitance
• Low input capacitance
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35
µm Cu
Part
Ordering Ccode
Marking
Package
BF961
BF961A or BF961B
BF961
TO50
BF961A
BF961A
BF961
TO50
BF961B
BF961B
BF961
TO50
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
20
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W


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