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NTE157 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE157
Description  Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE157 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE157
Silicon NPN Transistor
Audio Power Amp, High Voltage Converter
(Compl to NTE39)
Description:
The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated
equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays.
Features:
D Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA
D Current–Gain – Bandwidth Product: fT = 10MHz (Min) @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB
325V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
0.16W/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to case, RΘJC
6.25
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA (Inductive), L = 50mH
300
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
300
V
Collector Cutoff Current
ICEO
VCE = 200V, IB = 0
0.1
mA
ICEX
VCE = 300V, VEB(off) = 1.5V
0.1
mA
VCE = 300V, VEB(off) = 1.5V, TC = +100°C
1.0
mA
ICBO
VCB = 325V, IE = 0
10
µA
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
10
µA


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