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S1PDB2516 Datasheet(PDF) 1 Page - Sirectifier Semiconductors |
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S1PDB2516 Datasheet(HTML) 1 Page - Sirectifier Semiconductors |
1 / 2 page S1PDB250 05 thru S1PDB2516 FEATURES * Rating to 1600V PRV * High efficiency * Glass passivated chip junction * Electrically isolated metal case for maximum heat dissipation MECHANICAL DATA * Case: Molded plastic with Heatsink internally mounted in the bridge encapsulation * Polarity: As marked on Body * Mounting: Hole for # 10 screw * Weight: 18 grams S1PDB25005 S1PDB2502 S1PDB2504 S1PDB2506 S1PDB2508 VRRM V 50 200 400 600 800 VRWS V 35 140 280 420 560 VDC V 50 200 400 600 800 Single Phase Bridge Rectifiers Dimensions Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=60oC (With Heatsink) Maximum Ratings 25.0 IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 12.5A DC VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=125 C 350 1.1 5.0 500 o o I2t I2t Rating For Fusing (t < 8.3 ms), (Note 1) 374 CJ Typical Junction Capacitance Per Element (Note 2) TSTG Storage Temperature Range 130 -55 to +150 NOTES: 1. Measured At Non-repetitive, For Greater Than 1ms And Less Than 8.3ms. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink. Typical Thermal Resistance (Note 3) 1.3 ROJC TJ Operating Temperature Range -55 to +150 * RoHS compliant S1PDB2512 1200 840 1200 S1PDB2516 1600 1120 1600 A Unit A V uA A2S pF C o C/W o C o P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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