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S1PDB2516 Datasheet(PDF) 1 Page - Sirectifier Semiconductors

Part # S1PDB2516
Description  Single Phase Bridge Rectifiers
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Manufacturer  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

S1PDB2516 Datasheet(HTML) 1 Page - Sirectifier Semiconductors

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S1PDB250
05 thru S1PDB2516
FEATURES
* Rating to 1600V PRV
* High efficiency
* Glass passivated chip junction
* Electrically isolated metal case for maximum heat
dissipation
MECHANICAL DATA
* Case: Molded plastic with Heatsink internally
mounted in the bridge encapsulation
* Polarity: As marked on Body
* Mounting: Hole for # 10 screw
* Weight: 18 grams
S1PDB25005
S1PDB2502
S1PDB2504
S1PDB2506
S1PDB2508
VRRM
V
50
200
400
600
800
VRWS
V
35
140
280
420
560
VDC
V
50
200
400
600
800
Single Phase Bridge Rectifiers
Dimensions
Symbol
Characteristics
I(AV)
Maximum Average Forward
Rectified Current
@TC=60oC (With Heatsink)
Maximum Ratings
25.0
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 12.5A DC
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=125 C
350
1.1
5.0
500
o
o
I2t
I2t Rating For Fusing (t < 8.3 ms), (Note 1)
374
CJ
Typical Junction Capacitance Per Element (Note 2)
TSTG
Storage Temperature Range
130
-55 to +150
NOTES: 1. Measured At Non-repetitive, For Greater Than 1ms And Less Than 8.3ms.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
Typical Thermal Resistance (Note 3)
1.3
ROJC
TJ
Operating Temperature Range
-55 to +150
* RoHS compliant
S1PDB2512
1200
840
1200
S1PDB2516
1600
1120
1600
A
Unit
A
V
uA
A2S
pF
C
o
C/W
o
C
o
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com


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