NTB125N02R datasheet(2/6 Pages) ONSEMI

Part #	NTB125N02R

Description	Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK

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Manufacturer	ONSEMI [ON Semiconductor]

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NTB125N02R, NTP125N02R

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ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

25

−

28

15

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.5

10

mAdc

Gate−Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

5.0

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 10 Vdc, ID = 110 Adc)

(VGS = 4.5 Vdc, ID = 55 Adc)

(VGS = 10 Vdc, ID = 20 Adc)

(VGS = 4.5 Vdc, ID = 20 Adc)

RDS(on)

−

3.7

4.9

3.7

4.7

−

4.6

6.2

m

W

Forward Transconductance (Note 3)

(VDS = 10 Vdc, ID = 15 Adc)

gFS

−

44

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

−

2710

3440

pF

Output Capacitance

(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)

Coss

−

1105

1670

Transfer Capacitance

( DS

dc,

GS

,)

Crss

−

227

640

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

−

11

22

ns

Rise Time

(VGS = 10 Vdc, VDD = 10 Vdc,

tr

−

39

80

Turn−Off Delay Time

(VGS = 10 Vdc, VDD = 10 Vdc,

ID = 40 Adc, RG = 3 W)

td(off)

−

27

40

Fall Time

tf

−

21

40

Gate Charge

QT

−

23.6

28

nC

(VGS = 4.5 Vdc, ID = 40 Adc,

VDS = 10 Vdc) (Note 3)

Q1

−

5.1

−

VDS = 10 Vdc) (Note 3)

Q2

−

11

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

VSD

−

0.82

1.2

Vdc

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 3)

(IS = 55 Adc, VGS = 0 Vdc)

(I

20 A

V

0V

T

125

°C)

VSD

−

0.82

0.99

065

1.2

−

Vdc

( S

dc,

GS

dc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

−

0.65

−

Reverse Recovery Time

trr

−

36.5

−

ns

(IS = 30 Adc, VGS = 0 Vdc,

ta

−

17.7

−

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

tb

−

18.8

−

Reverse Recovery Stored Charge

QRR

−

0.024

−

mC

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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