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NLAS3699 Datasheet(PDF) 1 Page - ON Semiconductor |
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NLAS3699 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 10 page © Semiconductor Components Industries, LLC, 2004 October, 2004 − Rev. 0 1 Publication Order Number: NLAS3699/D NLAS3699 Dual DPDT Ultra−Low RON Switch The NLAS3699 is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−make feature. Features • Single Supply Operation 1.65 to 4.7 V VCC Function Directly from LiON Battery • Maximum Breakdown Voltage: 5.0 V • Tiny 3 x 3 mm QFN Pb−Free Package Meet JEDEC MO−220 Specifications • Low Static Power Typical Applications • Cell Phone Speaker/Microphone Switching • Ringtone−Chip/Amplifier Switching • Four Unbalanced (Single−Ended) Switches • Stereo Balanced (Push−Pull) Switching Important Information • ESD Protection: HBM (Human Body Model) > 4000 V MM (Machine Model) > 400 V • Continuous Current Rating Through each Switch ±300 mA • Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 • Pin for Pin Compatible with STG3699 QFN−16 CASE 485AE MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ORDERING INFORMATION 1 16 NLAS 3699 ALYW G 1 XXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package http://onsemi.com 4 1 16 13 9 12 58 14 7 15 6 310 211 D1 1S1 Vcc 4S2 2S2 GND 3S1 D3 3S2 3−4IN 4S1 D4 D2 2S1 1−2IN 1S2 |
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