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NTE154 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE154
Description  Silicon NPN Transistor High Voltage Video Output
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE154 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE154
Silicon NPN Transistor
High Voltage Video Output
Description:
The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output
to drive a color CRT.
Features:
D High Voltage: VCEO = 300V Min @ IC = 5mA
D Low Capacitance: Cob = 3pF Max @ VCB = 20V
D High Frequency: ft = 50MHz Min @ IC = 15mA
D High Power Dissipation: PD = 7W @ TC = +25°C
Absolute Maximum Ratings: (Note 1)
Collector to Base Voltage, VCBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage (Note 2), VCEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, VEBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (Note 3, Note 4), PD
TC = +25°C
7W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, Topr
+200
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 60sec), TL
+300
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These ratings are limiting values above which the serviceability of this device may be impaired.
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 3. These ratings are steady state limits.
Note 4. These ratings give a maximum junction temperature of +200
°C and junction to case thermal
resistance of +25
°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance
of +175
°C/W (derating factor of 5.71mW/°C).


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