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NTE154 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE154 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page ![]() NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: D High Voltage: VCEO = 300V Min @ IC = 5mA D Low Capacitance: Cob = 3pF Max @ VCB = 20V D High Frequency: ft = 50MHz Min @ IC = 15mA D High Power Dissipation: PD = 7W @ TC = +25°C Absolute Maximum Ratings: (Note 1) Collector to Base Voltage, VCBO 300V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector to Emitter Voltage (Note 2), VCEO 300V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter to Base Voltage, VEBO 7V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (Note 3, Note 4), PD TC = +25°C 7W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TA = +25°C 1W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, Topr +200 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 60sec), TL +300 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. These ratings are limiting values above which the serviceability of this device may be impaired. Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 3. These ratings are steady state limits. Note 4. These ratings give a maximum junction temperature of +200 °C and junction to case thermal resistance of +25 °C/W (derating factor of 40mW/°C); junction to ambient thermal resistance of +175 °C/W (derating factor of 5.71mW/°C). |