LV10200D datasheet(2/6 Pages) FOSHAN

Part #	LV10200D

Description	Schottky Barrier Diode in a TO-252 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

LV10200D

Rev.F May.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

Peak Reverse Voltage

VRRM

VRWM

VRM

200

V

RMS Reverse Voltage

VR(RMS)

140

V

Average Rectified Forward Current

IF(AV)

10

A

Non Repetitive Peak Surge Current

IFSM

150

A

Junction Temperature Range

Tj MAX

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Reverse Voltage

VBR

IR=0.3mA

200

V

Forward Voltage

VF

IF=2A

TJ=25℃

0.68

0.75

V

IF=2A

TJ=125℃

0.53

0.58

V

IF=10A

TJ=25℃

0.87

0.95

V

IF=10A

TJ=125℃

0.70

0.75

V

Instantaneous Reverse Current

IR

（

Note 1）

VR=200V

TJ=25℃

4

20

uA

VR=150V

TJ=125℃

1.9

5

mA

VR=200V

TJ=125℃

3.5

10

mA

注/Notes：

1. 使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating

effect.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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LV10200D Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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