LV10100CT datasheet(2/6 Pages) FOSHAN

Part #	LV10100CT

Description	Schottky Barrier Diode in a TO-220 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

LV10100CT

Rev.F Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM,

VRSM

VDC

100

V

RMS Reverse Voltage

VRMS

70

V

Average forward rectified current

IF(AV)

2×5

A

Non Repetitive Peak Surge Current

IFSM

80

A

Thermal Resistance Junction to Case

RθJc

2.8

℃

/W

Junction and Storage Temperature Range

Tj Tstg

-40～+150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Breakdown Reverse Voltage

VBR

IR=1mA(Ta=25 )

℃

100

V

Forward Voltage

VF

IF =3A(Ta=25 )

℃

0.59

V

IF =5A(Ta=25 )

℃

0.69

0.75

V

IF =3A(Ta=125 )

℃

0.53

V

IF =5A(Ta=125 )

℃

0.61

0.65

V

Instantaneous Reverse Current

IR

（

Note 1）

VR=100V(Ta=25 )

℃

5.0

50

μA

VR=100V(Ta=125 )

℃

3.0

10

mA

注/Notes：

1.

使用极短的测试时间，以尽量减少自热效应。/Short duration pulse test used to minimize self-heating

effect.

2.

除非特别注明，数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a

single chip

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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LV10100CT Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

LV10100CT Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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