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LV10100CT Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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LV10100CT Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 6 page LV10100CT Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Recurrent Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM, VRSM VDC 100 V RMS Reverse Voltage VRMS 70 V Average forward rectified current IF(AV) 2×5 A Non Repetitive Peak Surge Current IFSM 80 A Thermal Resistance Junction to Case RθJc 2.8 ℃ /W Junction and Storage Temperature Range Tj Tstg -40~+150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Breakdown Reverse Voltage VBR IR=1mA(Ta=25 ) ℃ 100 V Forward Voltage VF IF =3A(Ta=25 ) ℃ 0.59 V IF =5A(Ta=25 ) ℃ 0.69 0.75 V IF =3A(Ta=125 ) ℃ 0.53 V IF =5A(Ta=125 ) ℃ 0.61 0.65 V Instantaneous Reverse Current IR ( Note 1) VR=100V(Ta=25 ) ℃ 5.0 50 μA VR=100V(Ta=125 ) ℃ 3.0 10 mA 注/Notes: 1. 使用极短的测试时间,以尽量减少自热效应。/Short duration pulse test used to minimize self-heating effect. 2. 除非特别注明,数值为一个芯片的参数。/ Unless otherwise noted, values for the parameters of a single chip 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) |
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