IRF640 datasheet(1/5 Pages) FCI

Part #	IRF640

Description	18A 200V N CHANNEL POWER MOSFET

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Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, converters, solenoid and relay drivers.

Silicon Gate for Fast Switching Speeds

Low RDS(on) to Minimize On-Losses. Specified at Elevated

Temperature

Rugged – SOA is Power Dissipation Limited

Source-to-Drain Characterized for Use With Inductive

Loads

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current

Continuous

Pulsed

ID

IDM

18

72

A

Gate-to-Source Voltage

Continue

Non-repetitive

VGS

VGSM

±20

±40

V

Total Power Dissipation

Derate above 25

PD

125

1.00

W

W/

Operating and Storage Temperature Range

TJ, TSTG

-55 to 150

Single Pulse Drain-to-Source Avalanche Energy

TJ = 25

(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25 )

EAS

224

mJ

Thermal Resistance

Junction to Case

Junction to Ambient

JC

JA

1.00

62.5

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

TL

260

(1) Pulse Width and frequency is limited by TJ(max) and thermal response

IRF640 18A 200V N CHANNEL POWER MOSFET

Mechanical Dimensions

Description

TO-220AB

DIMENSION IN MM

D

S

G

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IRF640 Datasheet(PDF) 1 Page - First Components International

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