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L048 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. L048
Description  Three Phase Half Controlled Rectifier Bridge, B6HK
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

L048 Datasheet(HTML) 2 Page - IXYS Corporation

  L048 Datasheet HTML 1Page - IXYS Corporation L048 Datasheet HTML 2Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
2 - 2
0
50
100
150
0
20
40
60
80
100
120
A
I
dAV
°C
T
C
10-3
10-2
10-1
100
101
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-3
10-2
10-1
100
101
100
200
300
400
500
600
700
800
900
A
s
I
FSM
t
s
t
K/W
Z
thJC
50 Hz
80% V
RRM
T
VJ = 45°C
T
VJ = 125°C
Symbol
Test Conditions
Characteristic Values
VVZ 110
VVZ 175
I
R, ID
V
R = VRRM; VD = VDRM
T
VJ = TVJM
£
5mA
T
VJ = 25°C
£
0.3
mA
V
F, VT
I
F, IT = 200 A, TVJ = 25°C
£ 1.75
1.57
V
V
T0
For power-loss calculations only
0.85
0.85
V
r
T
(T
VJ = 125°C)
6
3.5
m
W
V
GT
V
D = 6 V;
T
VJ = 25°C
£
1.5
V
T
VJ = -40°C
£
1.6
V
I
GT
V
D = 6 V;
T
VJ = 25°C
£
100
mA
T
VJ = -40°C
£
200
mA
V
GD
T
VJ = TVJM;VD = 2/3 VDRM
£
0.2
V
I
GD
T
VJ = TVJM;VD = 2/3 VDRM
£
5mA
I
L
I
G = 0.3 A; tG = 30 msTVJ = 25°C
£
450
mA
di
G/dt = 0.3 A/ms
I
H
T
VJ = 25°C; VD = 6 V; RGK = ¥£
200
mA
t
gd
T
VJ = 25°C; VD = 1/2 VDRM
£
2
ms
I
G = 0.3 A; diG/dt = 0.3 A/ms
R
thJC
per thyristor (diode); DC current
0.65
0.46
K/W
per module
0.108
0.077
K/W
R
thJH
per thyristor (diode); DC current
0.8
0.55
K/W
per module
0.133
0.092
K/W
d
S
Creeping distance on surface
10
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s2
M6x10
C~
D~
E ~
A+
B-
12
25
66
26
26
72
80
94
4
5
6
3
1
2
Dimensions in mm (1 mm = 0.0394")
VVZ 110
VVZ 175
Fig. 3 Surge overload current
I
FSM: Crest value, t: duration
Fig. 1 Gate trigger characteristics
Fig. 2
DC output current at case
temperature
Fig. 4 Transient thermal impedance
junction to case (per leg)
VVZ 110
VVZ 110
VVZ 110
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
GT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: P
GAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
I
GD, TVJ = 125°C
4
2
1
5
6
3


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