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KM681001B-20 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # KM681001B-20
Description  128K x 8 Bit High-Speed CMOS Static RAM
Download  9 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681001B-20 Datasheet(HTML) 4 Page - Samsung semiconductor

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KM681001B
CMOS SRAM
PRELIMINARY
Rev 2.0
- 4 -
February 1998
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE
NOTE : tCO=tCO1, tCO2 / tLZ=tLZ1, tLZ2 / tHZ=tHZ1, tHZ2
Parameter
Symbol
KM681001B-15
KM681001B-20
Unit
Min
Max
Min
Max
Read Cycle Time
tRC
15
-
20
-
ns
Address Access Time
tAA
-
15
-
20
ns
Chip Select to Output
tCO*
-
15
-
20
ns
Output Enable to Valid Output
tOE
-
8
-
10
ns
Chip Enable to Low-Z Output
tLZ*
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ*
0
6
0
8
ns
Output Disable to High-Z Output
tOHZ
0
6
0
8
ns
Output Hold from Address Change
tOH
3
-
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
0
-
ns
Chip Selection to Power DownTime
tPD
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
DOUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance


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