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IRL3402 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL3402
Description  HEXFET Power MOSFET
Download  7 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL3402 Datasheet(HTML) 1 Page - International Rectifier

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10/31/97
IRL3402
PRELIMINARY
HEXFET® Power MOSFET
PD - 9.1697
S
D
G
VDSS = 20V
RDS(on) = 0.01Ω
ID = 85A
…
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 5.0V
85
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 5.0V
54
A
IDM
Pulsed Drain Current

340
PD @TC = 25°C
Power Dissipation
110
W
Linear Derating Factor
0.91
W/°C
VGS
Gate-to-Source Voltage
± 10
V
VGSM
Gate-to-Source Voltage
14
V
(Start Up Transient, tp = 100µs)
EAS
Single Pulse Avalanche Energy
‚
290
mJ
IAR
Avalanche Current

51
A
EAR
Repetitive Avalanche Energy

11
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters.
Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
TO-220AB
Description


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