IRF6665

6

www.irf.com

D.U.T.

3mA

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 16a. Gate Charge Test Circuit

Fig 16b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

1- Drain

2- Drain

3- Gate

4- Source

5- Drain

6- Drain

3

4

5

6

1

2

Fig 17.

Diode Reverse Recovery Test Circuit for N-Channel

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

Driver Gate Drive

Inductor Curent

D =

P.W.

Period

*

+

-

+

+

+

-

-

-

ƒ

„

‚

• Driver same type as D.U.T.

• D.U.T. - Device Under Test

D.U.T



Inductor Current

DirectFET™ Substrate and PCB Layout, SH Outline

(Small Size Can, H-Designation).

Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This

includes all recommendations for stencil and substrate designs.