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TPD4E02B04QDQARQ1 Datasheet(PDF) 10 Page - Texas Instruments |
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TPD4E02B04QDQARQ1 Datasheet(HTML) 10 Page - Texas Instruments |
10 / 22 page IO4 GND IO3 IO2 IO1 10 TPD4E02B04-Q1 SLVSDZ2 – JUNE 2017 www.ti.com Product Folder Links: TPD4E02B04-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 7 Detailed Description 7.1 Overview The TPD4E02B04-Q1 is an automotive-qualified bidirectional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 (Level 4) International Standard. The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins. 7.2 Functional Block Diagram 7.3 Feature Description 7.3.1 AEC-Q101 Qualified This device is qualified to AEC-Q101 standards and is qualified to operate from –40°C to +125°C. 7.3.2 ISO 10605 ESD Protection The I/O pins can withstand ESD events of at least ±8-kV contact and ±15-kV air gap according to the ISO 10605 (330 pF, 330 Ω) standard. The device diverts the current to ground. 7.3.3 IEC 61000-4-2 ESD Protection The I/O pins can withstand ESD events up to ±12-kV contact and ±15-kV air gap. An ESD-surge clamp diverts the current to ground. 7.3.4 IEC 61000-4-4 EFT Protection The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50- Ω impedance). An ESD-surge clamp diverts the current to ground. 7.3.5 IEC 61000-4-5 Surge Protection The I/O pins can withstand surge events up to 2 A and 17 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground. 7.3.6 IO Capacitance The capacitance between each I/O pin to ground is 0.25 pF (typical). This device supports data rates up to 10 Gbps. 7.3.7 DC Breakdown Voltage The DC breakdown voltage of each I/O pin is a minimum of ±5.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of ±3.6 V. 7.3.8 Ultra Low Leakage Current The I/O pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of ±2.5 V. |
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