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5962-9555201NXDR Datasheet(PDF) 5 Page - Texas Instruments

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Part # 5962-9555201NXDR
Description  Advanced LinCMOS Rail-to-Rail Operational Amplifier
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

5962-9555201NXDR Datasheet(HTML) 5 Page - Texas Instruments

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TLC2272M-MIL
www.ti.com
SLOS983 – JUNE 2017
Product Folder Links: TLC2272M-MIL
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Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD–.
(3)
Differential voltages are at IN+ with respect to IN–. Excessive current will flow if input is brought below VDD– – 0.3 V.
(4)
The output may be shorted to either supply. Temperature or supply voltages must be limited to ensure that the maximum dissipation
rating is not exceeded.
6 Specifications
6.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, VDD+
(2)
8
V
VDD
(2)
–8
V
Differential input voltage, VID
(3)
±16
V
Input voltage, VI (any input)
(2)
VDD− − 0.3
VDD+
V
Input current, II (any input)
±5
mA
Output current, IO
±50
mA
Total current into VDD+
±50
mA
Total current out of VDD
±50
mA
Duration of short-circuit current at (or below) 25°C(4)
Unlimited
Operating ambient temperature range, TA
–55
125
Storage temperature, Tstg
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings
VALUE
UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per AEC
Q100-002(1)
Devices in D packages
±2000
V
Charged-device model (CDM), per
AEC Q100-011
Devices in D packages
±1000
6.3 Recommended Operating Conditions
MIN
MAX
UNIT
VDD±
Supply voltage
±2.2
±8
V
VI
Input voltage
VDD
VDD+ − 1.5
V
VIC
Common-mode input voltage
VDD
VDD+ − 1.5
V
TA
Operating ambient temperature
–55
125
°C
(1)
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2)
Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) − TA) / RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
(3)
The package thermal impedance is calculated in accordance with JESD 51-7 (plastic) or MIL-STD-883 Method 1012 (ceramic).
6.4 Thermal Information
THERMAL METRIC(1)
TLC2272M-MIL
UNIT
D (SOIC)
JG (CDIP)
FK (LCCC)
U (CFP)
8-PIN
20-PIN
10-PIN
RθJA
Junction-to-ambient thermal resistance (2)(3)
115.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance (2)(3)
61.8
18
121.3
°C/W
RθJB
Junction-to-board thermal resistance
55.9
°C/W
ψJT
Junction-to-top characterization parameter
14.3
°C/W
ψJB
Junction-to-board characterization parameter
55.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
8.68
°C/W


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