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NTE15 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE15
Description  Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE15 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE15
Silicon NPN Transistor
VHF Amp, Mixer, Oscillator, UHF OSC
Features:
D High Transition Frequency: fT = 1.1GHz
D Low Base Resistance and High Gain
D Excellent Noise Characteristics
Applications:
D VHF Mixers and Oscillators
D UHF Oscillators
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
19V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, PC
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ
+125
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
19
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50µA
30
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50µA
5
V
Collector Cutoff Current
ICBO
VCB = 20V
0.5
µA
Emitter Cutoff Current
IEBO
VEB = 3V
0.5
µA
DC Current Gain
hFE
VCE = 10V, IC = 5mA
39
Collector Saturation Voltage
VCE(sat) IC = 10mA, IB = 1mA
0.1
V
Transition Frequency
fT
VCE = 5V, IE = 10mA
600
1100 MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
1.2
1.5
pF
Collector–Base Time Constant
Cdbb
IC = 10mA, VCB = 5V,
f = 31.8MHz
10
15
pS


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