NGD8209N

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Single Pulse Collector−to−Emitter Avalanche Energy

274

mJ

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

1.6

°C/W

Thermal Resistance, Junction to Ambient (Note 1)

105

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds

275

°C

1. When surface mounted to an FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Test Conditions

Temperature

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage

150°C

380

410

435

150°C

390

420

445

Zero Gate Voltage Collector Current

−

1.0

25

−

9.0

50

−

0.5

15

Reverse Collector−Emitter Leakage Current

−

0.5

1.0

mA

−

10

30

−

0.05

0.5

Reverse Collector−Emitter Clamp Voltage

26

33

38

29

36

41

24

32

36

Gate−Emitter Clamp Voltage

150°C

10

13

16

Gate−Emitter Leakage Current

150°C

380

635

1000

Gate Resistor

−

150°C

−

70

−

Ω

Gate Emitter Resistor

−

150°C

10

16

26

kΩ

Gate Threshold Voltage

1.0

1.42

2.0

0.7

0.95

1.5

1.1

1.62

2.2

Threshold Temperature Coefficient

(Negative)

−

−

−

−

3.5

−

mV/°C

2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.

2

Publication Order Number:

NGD8209N/D

Specifications subject to change without notice. © 2016 Littelfuse, Inc.

September 19, 2016 − Rev.

0