ATF-38143-TR1 datasheet(5/14 Pages) HP

Part #	ATF-38143-TR1

Description	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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Manufacturer	HP [Agilent(Hewlett-Packard)]

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ATF-38143 Typical Performance Curves, continued

Notes:

1. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is

approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device

is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)

when compared to a device that is driven by a constant current source as is typically done with active biasing.

FREQUENCY (GHz)

Figure 12. Fmin vs. Frequency and

Current at 2 V.

08

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

4

26

FREQUENCY (GHz)

Figure 13. Fmin and Ga vs. Frequency

and Temperature at 2 V, 10 mA.

0

30

25

20

15

10

5

0

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

7

2

1

45

6

3

–40

°C

+25

°C

+85

°C

Ga

Fmin

FREQUENCY (GHz)

Figure 14. Associated Gain vs.

Frequency and Current at 2 V.

012

30

25

20

15

10

5

0

4

28

10

6

5 mA

10 mA

20 mA

FREQUENCY (MHz)

Figure 15. P1dB and OIP3 vs. Frequency

and Temperature at 2 V, 10 mA.

0

8000

26

24

22

20

18

16

14

12

4000

2000

6000

10

–40

°C

+25

°C

+85

°C

CURRENT, I DS (mA)

Figure 16. NF, Gain, P 1dB and OIP3 vs.

IDS at 2 V, 3.9 GHz.

060

30

25

20

15

10

5

0

20

10

40

50

30

P1dB

OIP3

Gain

NF

CURRENT, I DS (mA)

Figure 17. NF, Gain, P 1dB and OIP3 vs.

IDS at 2 V, 5.8 GHz.

060

30

25

20

15

10

5

0

20

10

40

50

30

P1dB

OIP3

Gain

NF

5 mA

10 mA

20 mA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

88759/05-6.PM6.5J

2001.04.26, 9:18 AM

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ATF-38143-TR1 Datasheet(PDF) 5 Page - Agilent(Hewlett-Packard)

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