AO8802 datasheet(4/6 Pages) ETC

Part #	AO8802

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8802

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

1

2

3

4

5

04

8

12

16

20

Qg (nC)

Figure 7: Gate-Charge Characteristics

0

500

1000

1500

2000

2500

3000

0

5

10

15

20

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

0

10

20

30

40

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Coss

Crss

0.1

1.0

10.0

100.0

0.1

1

10

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100

µs

10ms

1ms

0.1s

1s

10s

DC

RDS(ON)

limited

TJ(Max)=150°C

TA=25°C

VDS=10V

ID=8A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

RθJA=83°C/W

Ton

T

PD

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150°C

TA=25°C

10

µs

Alpha & Omega Semiconductor, Ltd.

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