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74AHC1G66 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. 74AHC1G66
Description  Bilateral switch
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHC1G66 Datasheet(HTML) 2 Page - NXP Semiconductors

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2002 Jun 06
2
Philips Semiconductors
Product specification
Bilateral switch
74AHC1G66; 74AHCT1G66
FEATURES
• Very low ON-resistance:
–26
Ω (typical) at VCC = 3.0 V
–16
Ω (typical) at VCC = 4.5 V
–14
Ω (typical) at VCC = 5.5 V.
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• SOT353 and SOT753 package
• Output capability: non standard
• Specified from −40 to +125 °C.
DESCRIPTION
The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G66 provides an analog switch.
The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the
analog switch is turned off.
QUICK REFERENCE DATA
Ground = 0 V; Tamb =25 °C; tr =tf ≤ 3ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi + ((CL +CS) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = maximum switch capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
tPZH/tPZL
turn-on time E to Vos
CL = 15 pF; RL =1kΩ;
VCC =5V
33ns
tPHZ/tPLZ
turn-off time E to Vos
CL = 15 pF; RL =1kΩ;
VCC =5V
55ns
CI
input capacitance
2
2
pF
CPD
power dissipation capacitance
CL = 50 pF; f = 10 MHz;
notes 1 and 2
13
15
pF
CS
switch capacitance
4
4
pF


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