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2SK3019-SOT523 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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2SK3019-SOT523 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
1 / 3 page FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~+150 ℃ MOSFET ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 µA Gate –Source leakage current IGSS VGS = ±20V, VDS = 0V ±1 µA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 0.8 1.5 V VGS = 4V, ID =10mA 8 Ω Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics * Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss VDS =5V,VGS =0V,f =1MHz 4 pF Switching Characteristics * Turn-On Delay Time td(on) 15 ns Rise Time tr 35 ns Turn-Off Delay Time td(off) 80 ns Fall Time tf VGS =5V, VDD =5V, ID =10mA, R g=10Ω, RL=500Ω, 80 ns RθJA Thermal Resistance, Junction-to-Ambient 833 ℃ /W 2SK3019 N-channel MOSFET 1 2 3 1.GATE 2.SOURCE 3.DRAIN ■ Simplified outline(SOT-523) ■ ■ ■ Equivalent circuit Drain Gate Gate Protection Diode Source www.yfwdiode.com |
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