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2SK3018W-SOT323 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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2SK3018W-SOT323 Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
1 / 3 page FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance from Junction to Ambient 625 ℃ /W Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 µA Gate –Source leakage current IGSS VGS = ±20V, VDS = 0V ±500 nA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 0.8 1.5 V VGS = 4V, ID =10mA 8 Ω Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics * Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss VDS =5V,VGS =0V,f =1MHz 4 pF Switching Characteristics * Turn-On Delay Time td(on) 15 ns Rise Time tr 35 ns Turn-Off Delay Time td(off) 80 ns Fall Time tf VGS =5V, VDD =5V, ID =10mA, R g=10Ω, RL=500Ω 80 ns MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 ℃ unless otherwise noted) *These parameters have no way to verify. 2SK3018W N-channel MOSFET ■ ■ ■ ■ Marking KN Drain Gate Gate Protection Diode Source Marking 1 2 3 1.GATE 2.SOURCE 3.DRAIN ■ Simplified outline(SOT-323) www.yfwdiode.com |
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