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2SK3472 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3472 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3472 2002-03-04 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3472 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 kΩ) VDGR 450 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 1 A Drain current Pulse (Note 1) IDP 2 A Drain power dissipation PD 20 W Single pulse avalanche energy (Note 2) EAS 122 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) |
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